ASTM F1259-1989 金属电迁移造成的喷镀开路或阻力增加失效率检测用平板,直线试验结构的设计

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【英文标准名称】:GuideforDesignofFlat,Straight-LineTestStructuresforDetectingMetallizationOpen-CircuitorResistance-IncreaseFailureDuetoElectromigration
【原文标准名称】:金属电迁移造成的喷镀开路或阻力增加失效率检测用平板,直线试验结构的设计
【标准号】:ASTMF1259-1989
【标准状态】:作废
【国别】:
【发布日期】:1989
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F30.01
【标准类型】:(Guide)
【标准水平】:()
【中文主题词】:设计;失效率;导则;电气工程;试样
【英文主题词】:Acceleratedaging/testing-semiconductors;Defects-semiconductors;Electricalconductors-semiconductors;Electromigration;Failureendpoint-electroniccomponents/devices;Metallization;Microelectronicdeviceprocessing;Resistance-failure;Silico
【摘要】:1.1Thisguidecoversrecommendeddesignfeaturesforteststructuresusedinacceleratedstresstests,asdescribedinTestMethodF1260,tocharacterizethefailuredistributionofinterconnectmetallizationsthatfailduetoelectromigration.1.2Theguideisrestrictedtostructureswithastraighttestlineonaflatsurfacethatareusedtodetectfailuresduetoanopen-circuitorapercent-increaseinresistanceofthetestline.1.3Thisguideisnotintendedforteststructuresusedtodetectrandomdefectsinametallizationline.1.4Metallizationstestedandcharacterizedarethosethatareusedinmicroelectroniccircuitsanddevices.
【中国标准分类号】:A29
【国际标准分类号】:29_050
【页数】:2P.;A4
【正文语种】: